分离式半导体产品 FDMS3660S品牌、价格、PDF参数

FDMS3660S • 品牌、价格
元器件型号 厂商 描述 数量 价格
FDMS3660S Fairchild Semiconductor MOSFET N-CH 30V DUAL 8-PQFN 0 3,000:$1.08000
6,000:$1.04000
15,000:$1.00000
30,000:$0.98400
75,000:$0.96000
FDMS3660S Fairchild Semiconductor MOSFET N-CH 30V DUAL 8-PQFN 0 1:$2.55000
10:$2.30400
25:$2.06400
100:$1.85600
250:$1.64800
500:$1.44000
1,000:$1.19200
FDMS3660S Fairchild Semiconductor MOSFET N-CH 30V DUAL 8-PQFN 0 1:$2.55000
10:$2.30400
25:$2.06400
100:$1.85600
250:$1.64800
500:$1.44000
1,000:$1.19200
FDMQ8203 Fairchild Semiconductor MOSFET N/P-CH 100V DUAL 12-MLP 0 3,000:$1.33000
FDPC8011S Fairchild Semiconductor MOSF DL N CH ASYM 25V PWR CLIP33 0 3,000:$1.46300
6,000:$1.40800
15,000:$1.36400
30,000:$1.32000
FDPC8011S Fairchild Semiconductor MOSF DL N CH ASYM 25V PWR CLIP33 0 1:$3.17000
10:$2.83800
25:$2.55200
100:$2.32100
250:$2.10100
500:$1.88100
1,000:$1.58400
FDPC8011S Fairchild Semiconductor MOSF DL N CH ASYM 25V PWR CLIP33 0 1:$3.17000
10:$2.83800
25:$2.55200
100:$2.32100
250:$2.10100
500:$1.88100
1,000:$1.58400
FDMS3660S • PDF参数
类别: 分离式半导体产品
FET 型: 2 N 沟道(双)非对称型
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 13A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大): 2.7V @ 250µA
闸电荷(Qg) @ Vgs: 29nC @ 10V
输入电容 (Ciss) @ Vds: 1765pF @ 15V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: Power56
包装: 带卷 (TR)