分离式半导体产品 SSM6N15AFU,LF品牌、价格、PDF参数

SSM6N15AFU,LF • 品牌、价格
元器件型号 厂商 描述 数量 价格
SSM6N15AFU,LF Toshiba MOSFET N CH 30V 100MA 2-2J1C 6,000 3,000:$0.09900
6,000:$0.09300
15,000:$0.08700
30,000:$0.07980
75,000:$0.07650
150,000:$0.07350
SSM6N15AFU,LF Toshiba MOSFET N CH 30V 100MA 2-2J1C 6,000 1:$0.44000
10:$0.34200
25:$0.28520
100:$0.23400
250:$0.19500
500:$0.16200
1,000:$0.12000
SSM6N15AFU,LF Toshiba MOSFET N CH 30V 100MA 2-2J1C 6,000 1:$0.44000
10:$0.34200
25:$0.28520
100:$0.23400
250:$0.19500
500:$0.16200
1,000:$0.12000
SSM6N37FE,LM Toshiba MOSFET N CH 20V 250MA 2-2N1D 0 4,000:$0.09900
8,000:$0.09350
12,000:$0.08525
28,000:$0.07975
100,000:$0.07013
200,000:$0.06875
SSM6N37FE,LM Toshiba MOSFET N CH 20V 250MA 2-2N1D 0 1:$0.58000
10:$0.41300
25:$0.34120
100:$0.27500
250:$0.19800
500:$0.15950
1,000:$0.12375
SSM6N37FE,LM Toshiba MOSFET N CH 20V 250MA 2-2N1D 0 1:$0.58000
10:$0.41300
25:$0.34120
100:$0.27500
250:$0.19800
500:$0.15950
1,000:$0.12375
SSM6N15AFU,LF • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100mA
开态Rds(最大)@ Id, Vgs @ 25° C: 3.6 欧姆 @ 10mA,4V
Id 时的 Vgs(th)(最大): 1.5V @ 100µA
闸电荷(Qg) @ Vgs: -
输入电容 (Ciss) @ Vds: 13.5pF @ 3V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: US6
包装: 带卷 (TR)