半导体模块 IXFN82N60Q3品牌、价格、PDF参数

IXFN82N60Q3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
IXFN82N60Q3 IXYS MOSFET N-CH 600V 66A SOT-227 90 1:$43.17000
10:$40.36700
100:$35.00000
250:$32.66664
500:$31.03328
1,000:$29.86662
2,500:$28.93329
5,000:$27.99996
IXFN100N50Q3 IXYS MOSFET N-CH 500V 82A SOT-227 66 1:$43.17000
10:$40.36700
100:$35.00000
250:$32.66664
500:$31.03328
1,000:$29.86662
2,500:$28.93329
5,000:$27.99996
IXFN44N100Q3 IXYS MOSFET N-CH 1000V 38A SOT-227 56 1:$43.17000
10:$40.36700
100:$35.00000
250:$32.66664
500:$31.03328
1,000:$29.86662
2,500:$28.93329
5,000:$27.99996
IXFN62N80Q3 IXYS MOSFET N-CH 800V 49A SOT-227 34 1:$43.17000
10:$40.36700
100:$35.00000
250:$32.66664
500:$31.03328
1,000:$29.86662
2,500:$28.93329
5,000:$27.99996
IXFN32N100Q3 IXYS MOSFET N-CH 1000V 28A SOT-227 92 1:$45.51000
10:$42.43500
100:$36.90000
250:$34.44000
500:$32.71800
1,000:$31.36500
2,500:$30.50400
5,000:$29.52000
IXFN44N80Q3 IXYS MOSFET N-CH 800V 37A SOT-227 68 1:$45.51000
10:$42.43500
100:$36.90000
250:$34.44000
500:$32.71800
1,000:$31.36500
2,500:$30.50400
5,000:$29.52000
IXFN82N60Q3 • PDF参数
类别: 半导体模块
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 66A
开态Rds(最大)@ Id, Vgs @ 25° C: 75 毫欧 @ 41A,10V
Id 时的 Vgs(th)(最大): 6.5V @ 8mA
闸电荷(Qg) @ Vgs: 275nC @ 10V
输入电容 (Ciss) @ Vds: 13500pF @ 25V
功率 - 最大: 960W
安装类型: 底座安装
封装/外壳: SOT-227-4,miniBLOC
供应商设备封装: SOT-227B
包装: 管件