半导体模块 APTM10DHM09TG品牌、价格、PDF参数

APTM10DHM09TG • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTM10DHM09TG Microsemi Power Products Group MOSFET MOD ASYMMETRIC BRIDGE SP4 0 10:$88.80700
APTM50DDA10T3G Microsemi Power Products Group MOSFET MOD DUAL BOOST CHOP SP3 0 14:$60.13571
APTM100H80FT1G Microsemi Power Products Group MOSFET MODULE FULL BRIDGE SP1 0 15:$58.07533
APTM10DSKM19T3G Microsemi Power Products Group MOSFET MOD DUAL BUCK CHOPPER SP3 0 17:$50.16529
APTC60SKM35T1G Microsemi Power Products Group MOSFET N-CH 600V 72A SP1 0 19:$48.94947
APTM100SK40T1G Microsemi Power Products Group MOSFET N-CH 1000V 20A SP1 0 22:$41.94909
APTC80SK15T1G Microsemi Power Products Group MOSFET N-CH 800V 28A SP1 0 24:$37.38292
APTC80DA15T1G Microsemi Power Products Group MOSFET N-CH 800V 28A SP1 0 24:$37.38292
APTM10DHM09TG • PDF参数
类别: 半导体模块
FET 型: 2 N 沟道(非对称桥)
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 139A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 69.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 2.5mA
闸电荷(Qg) @ Vgs: 350nC @ 10V
输入电容 (Ciss) @ Vds: 9875pF @ 25V
功率 - 最大: 390W
安装类型: 底座安装
封装/外壳: SP4
供应商设备封装: SP4
包装: 散装