半导体模块 APTGT50H120T3G品牌、价格、PDF参数

APTGT50H120T3G • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGT50H120T3G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP3 0 11:$74.97182
APTGT50A120TG Microsemi Power Products Group IGBT MOD TRENCH PHASE LEG SP4 0 11:$73.39091
APTGT100DH60TG Microsemi Power Products Group IGBT MOD TRENCH ASYM BRIDGE SP4 0 12:$72.11417
APTGF180SK60TG Microsemi Power Products Group IGBT 600V 220A 833W SP4 0 12:$71.95417
APTGF180DA60TG Microsemi Power Products Group IGBT 600V 220A 833W SP4 0 12:$71.95417
APTGT50TDU60PG Microsemi Power Products Group IGBT MOD TRIPLE DUAL SOURCE SP6P 0 10:$118.44700
APTGT100SK120TG Microsemi Power Products Group IGBT 1200V 140A 480W SP4 0 12:$71.90667
APTGT50TA60PG Microsemi Power Products Group IGBT MOD TRNCH TRPL PH LEG SP6-P 0 10:$118.44700
APTGT150SK120G Microsemi Power Products Group IGBT 1200V 220A 690W SP6 0 10:$117.61100
APTGT150DA120G Microsemi Power Products Group IGBT 1200V 220A 690W SP6 0 10:$117.61100
APTGT50H120T3G • PDF参数
类别: 半导体模块
IGBT 类型: 沟道和场截止
配置: 全桥反相器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.1V @ 15V,50A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 250µA
Vce 时的输入电容 (Cies): 3.6nF @ 25V
功率 - 最大: 270W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP3
供应商设备封装: SP3