半导体模块 APTGT100H170G品牌、价格、PDF参数

APTGT100H170G • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGT100H170G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP6 0 10:$212.60700
APTGT225DU170G Microsemi Power Products Group IGBT MOD TRENCH DUAL SOURCE SP6 0 10:$215.45400
APTGT225A170G Microsemi Power Products Group IGBT MODULE TRENCH PHASE LEG SP6 0 10:$215.63800
APTGF300DU120G Microsemi Power Products Group IGBT MODULE NPT DUAL SP6 0 10:$220.26900
APTGT600DU60G Microsemi Power Products Group IGBT MOD TRENCH DUAL SOURCE SP6 0 10:$234.16300
APTGT300H60G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP6 0 10:$235.49400
APTGT400A120G Microsemi Power Products Group IGBT MOD TRENCH PHASE LEG SP6 0 10:$247.02200
APTGT200H120G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP6 0 10:$248.18400
APTGT400A120D3G Microsemi Power Products Group IGBT MOD TRENCH PHASE LEG D3 0 10:$261.86500
APTGT150H170G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP6 0 10:$262.48800
APTGT100H170G • PDF参数
类别: 半导体模块
IGBT 类型: 沟道和场截止
配置: 全桥反相器
电压 - 集电极发射极击穿(最大): 1700V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,100A
电流 - 集电极 (Ic)(最大): 150A
电流 - 集电极截止(最大): 350µA
Vce 时的输入电容 (Cies): 9nF @ 25V
功率 - 最大: 560W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP6
供应商设备封装: SP6