半导体模块 APTGT75SK120T1G品牌、价格、PDF参数

APTGT75SK120T1G • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGT75SK120T1G Microsemi Power Products Group IGBT 1200V 110A 357W SP1 0 19:$47.79474
APTGF50H60T1G Microsemi Power Products Group IGBT MODULE NPT FULL BRIDGE SP1 0 18:$48.35222
APTGT20X60T3G Microsemi Power Products Group IGBT MODULE TRENCH 3PH BRDG SP3 0 17:$48.66529
APTGT30H60T3G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP3 0 19:$49.07368
APTGT100DA120T1G Microsemi Power Products Group IGBT 1200V 140A 480W SP1 0 17:$49.17647
APTGT30A170T1G Microsemi Power Products Group IGBT MODULE TRENCH PHASE LEG SP1 0 17:$49.37412
APTGF50DSK60T3G Microsemi Power Products Group IGBT MODULE NPT BUCK CHOP SP3 0 18:$49.42944
APTGT50H60T1G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP1 0 17:$49.60471
APTGT50DSK60T3G Microsemi Power Products Group IGBT MOD TRENCH DL BUCK CHOP SP3 0 18:$49.73111
APTGT50SK170T1G Microsemi Power Products Group IGBT 1700V 75A 312W SP1 0 18:$49.82000
APTGV15H120T3G Microsemi Power Products Group IGBT NPT BST CHOP FULL BRDG SP3 0 18:$50.15778
APTGT75SK120T1G • PDF参数
类别: 半导体模块
IGBT 类型: 沟道和场截止
配置: 单一
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.1V @ 15V,75A
电流 - 集电极 (Ic)(最大): 110A
电流 - 集电极截止(最大): 250µA
Vce 时的输入电容 (Cies): 5.34nF @ 25V
功率 - 最大: 357W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP1
供应商设备封装: SP1