半导体模块 APTGT50A170T1G品牌、价格、PDF参数

APTGT50A170T1G • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGT50A170T1G Microsemi Power Products Group IGBT MOD TRENCH PHASE LEG SP1 0 15:$58.86667
APTGT20H60T3G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP3 0 20:$44.68550
APTGT75H60T3G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP3 0 14:$62.22857
APTGT50SK120TG Microsemi Power Products Group IGBT 1200V 75A 277W SP4 0 13:$62.43923
APTCV50H60T3G Microsemi Power Products Group IGBT TRENCH FULL BRIDGE SP3 0 12:$67.21250
APTGT35X120T3G Microsemi Power Products Group IGBT MOD TRENCH 3PH BRIDGE SP3 2 1:$68.92000
APTGT25X120T3G Microsemi Power Products Group IGBT MODULE TRENCH 3PH BRDG SP3 0 12:$69.81500
APTGF100SK120TG Microsemi Power Products Group IGBT 1200V 135A 568W SP4 0 12:$70.29417
APTGF50A60T1G Microsemi Power Products Group IGBT MODULE NPT PHASE LEG SP1 0 24:$38.00458
APTGT50A170T1G • PDF参数
类别: 半导体模块
IGBT 类型: 沟道和场截止
配置: 半桥
电压 - 集电极发射极击穿(最大): 1700V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,50A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 250µA
Vce 时的输入电容 (Cies): 4.4nF @ 25V
功率 - 最大: 312W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP1
供应商设备封装: SP1