分离式半导体产品 BSP149 L6327品牌、价格、PDF参数

BSP149 L6327 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSP149 L6327 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 35,244 1:$1.16000
10:$1.03800
25:$0.91640
100:$0.82460
250:$0.71768
500:$0.64134
IPD180N10N3 G Infineon Technologies MOSFET N-CH 100V 43A TO252-3 2,500 2,500:$0.62020
5,000:$0.58919
12,500:$0.56482
25,000:$0.54932
62,500:$0.53160
BSP149 L6327 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 35,244 1:$1.16000
10:$1.03800
25:$0.91640
100:$0.82460
250:$0.71768
500:$0.64134
BSP149 L6327 Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 34,000 1,000:$0.45810
2,000:$0.42756
5,000:$0.40618
10,000:$0.38939
25,000:$0.37870
50,000:$0.36648
BSC0906NS Infineon Technologies MOSFET N-CH 30V 18A 8TDSON 9,696 1:$1.30000
10:$1.16500
25:$1.02800
100:$0.92530
250:$0.80536
500:$0.71968
1,000:$0.56546
2,500:$0.53118
BSC0906NS Infineon Technologies MOSFET N-CH 30V 18A 8TDSON 9,696 1:$1.30000
10:$1.16500
25:$1.02800
100:$0.92530
250:$0.80536
500:$0.71968
1,000:$0.56546
2,500:$0.53118
BSC0906NS Infineon Technologies MOSFET N-CH 30V 18A 8TDSON 5,000 5,000:$0.45579
10,000:$0.43694
25,000:$0.42495
50,000:$0.41124
IPB260N06N3 G Infineon Technologies MOSFET N-CH 60V 27A TO263-3 1,930 1:$1.13000
10:$1.01100
25:$0.89200
100:$0.80270
250:$0.69864
500:$0.62434
BSP149 L6327 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 耗尽模式
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 660mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.8 欧姆 @ 660mA,10V
Id 时的 Vgs(th)(最大): 1V @ 400µA
闸电荷(Qg) @ Vgs: 14nC @ 5V
输入电容 (Ciss) @ Vds: 430pF @ 25V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: PG-SOT223-4
包装: Digi-Reel®