分离式半导体产品 SI2302DS,215品牌、价格、PDF参数

SI2302DS,215 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI2302DS,215 NXP Semiconductors MOSFET N-CH 20V 2.5A SOT23 11,613 1:$0.53000
10:$0.41200
25:$0.34760
100:$0.28340
250:$0.23472
500:$0.19390
1,000:$0.14523
SI2302DS,215 NXP Semiconductors MOSFET N-CH 20V 2.5A SOT23 9,000 3,000:$0.13000
6,000:$0.12200
15,000:$0.11400
30,000:$0.10400
75,000:$0.10000
150,000:$0.09700
SI2304DS,215 NXP Semiconductors MOSFET N-CH 30V 1.7A SOT23 7,822 1:$0.53000
10:$0.41200
25:$0.34760
100:$0.28340
250:$0.23472
500:$0.19390
1,000:$0.14523
SI2304DS,215 NXP Semiconductors MOSFET N-CH 30V 1.7A SOT23 7,822 1:$0.53000
10:$0.41200
25:$0.34760
100:$0.28340
250:$0.23472
500:$0.19390
1,000:$0.14523
SI2304DS,215 NXP Semiconductors MOSFET N-CH 30V 1.7A SOT23 6,000 3,000:$0.13000
6,000:$0.12200
15,000:$0.11400
30,000:$0.10400
75,000:$0.10000
150,000:$0.09700
SI2302DS,215 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 85 毫欧 @ 3.6A,4.5V
Id 时的 Vgs(th)(最大): 650mV @ 1mA
闸电荷(Qg) @ Vgs: 10nC @ 4.5V
输入电容 (Ciss) @ Vds: 230pF @ 10V
功率 - 最大: 830mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: 剪切带 (CT)