分离式半导体产品 PHD36N03LT,118品牌、价格、PDF参数

PHD36N03LT,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PHD36N03LT,118 NXP Semiconductors MOSFET N-CH 30V 43.4A DPAK 5,000 2,500:$0.24780
PHD36N03LT,118 NXP Semiconductors MOSFET N-CH 30V 43.4A DPAK 0 10,000:$0.27300
BUK9880-55A,115 NXP Semiconductors MOSFET N-CH 55V 7A SOT-223 5,000 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK9880-55A,115 NXP Semiconductors MOSFET N-CH 55V 7A SOT223 0 1,000:$0.24956
2,000:$0.22754
5,000:$0.21286
10,000:$0.19818
25,000:$0.18790
50,000:$0.18350
100,000:$0.18056
PMN38EN,165 NXP Semiconductors MOSFET N-CH FET 30V 5.4A SOT457 0 10,000:$0.15900
PMN45EN,165 NXP Semiconductors MOSFET N-CH 30V 5.2A SOT457 0 10,000:$0.15000
PHD36N03LT,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 43.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 17 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 18.5nC @ 10V
输入电容 (Ciss) @ Vds: 690pF @ 25V
功率 - 最大: 57.6W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)