分离式半导体产品 PHD20N06T,118品牌、价格、PDF参数

PHD20N06T,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PHD20N06T,118 NXP Semiconductors MOSFET N-CH 55V 18A SOT428 0 10,000:$0.26000
BUK98180-100A,115 NXP Semiconductors MOSFET N-CH 100V 4.6A SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK98180-100A,115 NXP Semiconductors MOSFET N-CH 100V 4.6A SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK7880-55A,115 NXP Semiconductors MOSFET N-CH 55V SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK7880-55A,115 NXP Semiconductors MOSFET N-CH 55V SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
PHD20N06T,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 18A
开态Rds(最大)@ Id, Vgs @ 25° C: 77 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 11nC @ 10V
输入电容 (Ciss) @ Vds: 422pF @ 25V
功率 - 最大: 51W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)