分离式半导体产品 FDMS86500DC品牌、价格、PDF参数

FDMS86500DC • 品牌、价格
元器件型号 厂商 描述 数量 价格
FDMS86500DC Fairchild Semiconductor MOSFET N CH 60V 29A 8-PQFN 3,000 3,000:$1.08000
6,000:$1.04000
15,000:$1.00000
30,000:$0.98400
75,000:$0.96000
FDMS86300DC Fairchild Semiconductor MOSFET N CH 80V 24A 8-PQFN 4,910 1:$2.55000
10:$2.30400
25:$2.06400
100:$1.85600
250:$1.64800
500:$1.44000
1,000:$1.19200
FDMS86101DC Fairchild Semiconductor MOSFET N-CH 100V 14.5A 8-PQFN 0 3,000:$1.01250
FDD86110 Fairchild Semiconductor MOSFET N-CH 100V 12.5A DPAK-3 0 2,500:$1.01250
FDMS8023S Fairchild Semiconductor MOSFET N-CH 30V POWER56 3,362 1:$2.55000
10:$2.30400
25:$2.06400
100:$1.85600
250:$1.64800
500:$1.44000
1,000:$1.19200
FDMS8023S Fairchild Semiconductor MOSFET N-CH 30V POWER56 3,362 1:$2.55000
10:$2.30400
25:$2.06400
100:$1.85600
250:$1.64800
500:$1.44000
1,000:$1.19200
FDMS86500DC • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 29A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.3 毫欧 @ 29A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 107nC @ 10V
输入电容 (Ciss) @ Vds: 7680pF @ 30V
功率 - 最大: 3.2W
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘
供应商设备封装: 8-PQFN(5X6),Power56
包装: 带卷 (TR)