分离式半导体产品 BSZ900N20NS3 G品牌、价格、PDF参数

BSZ900N20NS3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSZ900N20NS3 G Infineon Technologies MOSFET N-CH 200V 15.2A 8TSDSON 9,672 1:$2.28000
10:$1.95800
25:$1.76240
100:$1.59910
250:$1.43596
500:$1.24014
1,000:$1.04432
2,500:$0.94642
BSC889N03LS G Infineon Technologies MOSFET N-CH 30V 45A TDSON-8 10,000 1:$0.95000
10:$0.85200
25:$0.75160
100:$0.67640
250:$0.58868
500:$0.52606
1,000:$0.41333
2,500:$0.38828
BSZ900N20NS3 G Infineon Technologies MOSFET N-CH 200V 15.2A 8TSDSON 5,000 5,000:$0.84851
10,000:$0.81588
25,000:$0.79956
50,000:$0.78324
BSC889N03LS G Infineon Technologies MOSFET N-CH 30V 45A TDSON-8 10,000 1:$0.95000
10:$0.85200
25:$0.75160
100:$0.67640
250:$0.58868
500:$0.52606
1,000:$0.41333
2,500:$0.38828
BSC900N20NS3 G Infineon Technologies MOSFET N-CH 200V 15.2A 8TDSON 9,040 1:$2.28000
10:$1.95800
25:$1.76240
100:$1.59910
250:$1.43596
500:$1.24014
1,000:$1.04432
2,500:$0.94642
BSC900N20NS3 G Infineon Technologies MOSFET N-CH 200V 15.2A 8TDSON 9,040 1:$2.28000
10:$1.95800
25:$1.76240
100:$1.59910
250:$1.43596
500:$1.24014
1,000:$1.04432
2,500:$0.94642
BSZ900N20NS3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 15.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 7.6A,10V
Id 时的 Vgs(th)(最大): 4V @ 30µA
闸电荷(Qg) @ Vgs: 11.6nC @ 10V
输入电容 (Ciss) @ Vds: 920pF @ 100V
功率 - 最大: 62.5W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PG-TSDSON-8(3.3x3.3)
包装: 剪切带 (CT)