分离式半导体产品 STB80N20M5品牌、价格、PDF参数

STB80N20M5 • 品牌、价格
元器件型号 厂商 描述 数量 价格
STB80N20M5 STMicroelectronics MOSFET N-CH 200V 61A D2PAK 0 1,000:$3.48300
2,000:$3.35400
5,000:$3.22500
10,000:$3.17340
25,000:$3.09600
STW13N95K3 STMicroelectronics MOSFET N-CH 950V 10A 190W TO-247 407 1:$6.63000
10:$5.96300
100:$4.90250
250:$4.50500
500:$4.10750
1,000:$3.57750
2,500:$3.44500
5,000:$3.31250
10,000:$3.25950
STB36NM60N STMicroelectronics MOSFET N-CH 600V 29A D2PAK 500 1:$11.44000
10:$10.38200
25:$9.62640
100:$8.82000
250:$8.06400
500:$7.50960
STP34NM60N STMicroelectronics MOSFET N-CH 600V 29A TO-220 895 1:$7.50000
10:$6.75000
25:$6.15000
100:$5.55000
250:$5.10000
500:$4.65000
1,000:$4.05000
2,500:$3.90000
5,000:$3.75000
STW69N65M5 STMicroelectronics MOSFET N-CH 650V 58A TO-247 300 1:$19.56000
10:$17.78000
100:$15.11300
250:$13.77952
500:$12.89050
1,000:$11.82370
2,500:$11.37920
5,000:$11.02360
10,000:$10.66800
STB80N20M5 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 61A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 30.5A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 104nC @ 10V
输入电容 (Ciss) @ Vds: 4329pF @ 50V
功率 - 最大: 190W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)