分离式半导体产品 BSS139 H6327品牌、价格、PDF参数

BSS139 H6327 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSS139 H6327 Infineon Technologies MOSFET N-CH 250V 100MA SOT23 2,728 1:$0.60000
10:$0.48400
25:$0.42320
100:$0.36270
250:$0.31320
500:$0.26926
1,000:$0.20881
BSS139 H6327 Infineon Technologies MOSFET N-CH 250V 100MA SOT23 2,728 1:$0.60000
10:$0.48400
25:$0.42320
100:$0.36270
250:$0.31320
500:$0.26926
1,000:$0.20881
BSS139 H6327 Infineon Technologies MOSFET N-CH 250V 100MA SOT23 0 3,000:$0.17035
6,000:$0.15936
15,000:$0.14837
30,000:$0.14012
75,000:$0.13738
150,000:$0.13188
BSV236SP H6327 Infineon Technologies MOSFET P-CH 20V 1.5A SOT363 5,500 1:$0.56000
10:$0.44200
25:$0.36800
100:$0.30230
250:$0.25188
500:$0.20926
1,000:$0.15500
BSV236SP H6327 Infineon Technologies MOSFET P-CH 20V 1.5A SOT363 5,500 1:$0.56000
10:$0.44200
25:$0.36800
100:$0.30230
250:$0.25188
500:$0.20926
1,000:$0.15500
BSS139 H6327 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 耗尽模式
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 100mA
开态Rds(最大)@ Id, Vgs @ 25° C: 14 欧姆 @ 100µA,10V
Id 时的 Vgs(th)(最大): 1V @ 56µA
闸电荷(Qg) @ Vgs: 3.5nC @ 5V
输入电容 (Ciss) @ Vds: 76pF @ 25V
功率 - 最大: 360mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: PG-SOT23-3
包装: Digi-Reel®