分离式半导体产品 BSC014NE2LSI品牌、价格、PDF参数

BSC014NE2LSI • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSC014NE2LSI Infineon Technologies MOSFET N-CH 25V 33A TDSON-8 6,783 1:$2.23000
10:$1.91000
25:$1.71920
100:$1.55990
250:$1.40076
500:$1.20974
1,000:$1.01872
2,500:$0.92322
BSC014NE2LSI Infineon Technologies MOSFET N-CH 25V 33A TDSON-8 5,000 5,000:$0.82771
10,000:$0.79588
25,000:$0.77996
50,000:$0.76404
IPD250N06N3 G Infineon Technologies MOSFET N-CH 60V 28A TO252-3 4,820 1:$0.96000
10:$0.82500
25:$0.73800
100:$0.65130
250:$0.56448
500:$0.47762
1,000:$0.37993
IPD250N06N3 G Infineon Technologies MOSFET N-CH 60V 28A TO252-3 4,820 1:$0.96000
10:$0.82500
25:$0.73800
100:$0.65130
250:$0.56448
500:$0.47762
1,000:$0.37993
BSC014NE2LSI • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.4 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 39nC @ 10V
输入电容 (Ciss) @ Vds: 2700pF @ 12V
功率 - 最大: 74W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PG-TDSON-8
包装: 剪切带 (CT)