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分离式半导体产品 SIA425EDJ-T1-GE3品牌、价格、PDF参数

SIA425EDJ-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 5,645 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 5,645 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SI1050X-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 8V SC-89-6 5,757 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SI1050X-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 8V SC-89-6 3,000 3,000:$0.17050
6,000:$0.15950
15,000:$0.14850
30,000:$0.14025
75,000:$0.13750
150,000:$0.13200
SI1056X-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-89-6 8,138 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SI1056X-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-89-6 8,138 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SI1056X-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-89-6 6,000 3,000:$0.17050
6,000:$0.15950
15,000:$0.14850
30,000:$0.14025
75,000:$0.13750
150,000:$0.13200
SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A 11,480 1:$0.50000
25:$0.34640
100:$0.29700
250:$0.25652
500:$0.22050
1,000:$0.17100
SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A 11,480 1:$0.50000
25:$0.34640
100:$0.29700
250:$0.25652
500:$0.22050
1,000:$0.17100
SI1021R-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 190MA SC-75A 9,000 3,000:$0.16000
SI1422DH-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 4A SC70-6 4,364 1:$0.55000
25:$0.38520
100:$0.33000
250:$0.28500
500:$0.24500
1,000:$0.19000
SI1422DH-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 4A SC70-6 4,364 1:$0.55000
25:$0.38520
100:$0.33000
250:$0.28500
500:$0.24500
1,000:$0.19000
SI1422DH-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 4A SC70-6 3,000 3,000:$0.15500
6,000:$0.14500
15,000:$0.13500
30,000:$0.12750
75,000:$0.12500
150,000:$0.12000
SI3460DDV-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 6-TSOP 4,808 1:$0.50000
25:$0.34640
100:$0.29700
250:$0.25652
500:$0.22050
1,000:$0.17100
SIA425EDJ-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道，金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds（最大）@ Id, Vgs @ 25° C: 60 毫欧 @ 4.2A，4.5V
Id 时的 Vgs(th)（最大）: 1V @ 250µA
闸电荷(Qg) @ Vgs: -
输入电容 (Ciss) @ Vds: -
功率 - 最大: 15.6W
安装类型: 表面贴装
封装/外壳: PowerPAK? SC-70-6
供应商设备封装: PowerPAK? SC-70-6 单
包装: Digi-Reel®
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