分离式半导体产品 SI4396DY-T1-GE3品牌、价格、PDF参数

SI4396DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4396DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.58800
5,000:$0.55860
12,500:$0.53550
25,000:$0.52080
62,500:$0.50400
IRFR9220PBF Vishay Siliconix MOSFET P-CH 200V 3.6A DPAK 3,000 1:$1.47000
25:$1.17320
100:$1.02660
250:$0.90084
500:$0.79610
1,000:$0.62850
2,500:$0.58660
5,000:$0.55727
10,000:$0.53423
SI4160DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 2,500 1:$1.46000
25:$1.14920
100:$1.03410
250:$0.90004
500:$0.80430
1,000:$0.63195
SI4160DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 2,500 1:$1.46000
25:$1.14920
100:$1.03410
250:$0.90004
500:$0.80430
1,000:$0.63195
SI4160DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.53620
5,000:$0.50939
12,500:$0.48832
25,000:$0.47492
IRF9510STRLPBF Vishay Siliconix MOSFET P-CH 100V 4A D2PAK 695 1:$1.55000
25:$1.22120
100:$1.09890
250:$0.95644
IRF9510STRLPBF Vishay Siliconix MOSFET P-CH 100V 4A D2PAK 695 1:$1.55000
25:$1.22120
100:$1.09890
250:$0.95644
IRF9510STRLPBF Vishay Siliconix MOSFET P-CH 100V 4A D2PAK 0 800:$0.67563
1,600:$0.61050
2,400:$0.56980
5,600:$0.54131
20,000:$0.51893
40,000:$0.50468
SI4396DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 16A
开态Rds(最大)@ Id, Vgs @ 25° C: 11.5 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2.6V @ 250µA
闸电荷(Qg) @ Vgs: 45nC @ 10V
输入电容 (Ciss) @ Vds: 1675pF @ 15V
功率 - 最大: 5.4W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)