分离式半导体产品 SI4490DY-T1-GE3品牌、价格、PDF参数

SI4490DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 8-SOIC 126 1:$1.84000
25:$1.42280
100:$1.29120
250:$1.15940
500:$1.00130
1,000:$0.84320
SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 8-SOIC 0 2,500:$0.76667
SIR800DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 243 1:$1.84000
25:$1.42280
100:$1.29120
250:$1.15940
500:$1.00130
1,000:$0.84320
SIR800DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 243 1:$1.84000
25:$1.42280
100:$1.29120
250:$1.15940
500:$1.00130
1,000:$0.84320
SIR800DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 0 3,000:$0.71145
6,000:$0.68510
15,000:$0.65875
30,000:$0.64558
75,000:$0.63240
IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK 800 1:$1.82000
25:$1.43720
100:$1.29330
250:$1.12564
IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK 800 1:$1.82000
25:$1.43720
100:$1.29330
250:$1.12564
SI4490DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 2.85A
开态Rds(最大)@ Id, Vgs @ 25° C: 80 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 42nC @ 10V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 1.56W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)