PSMN1R0-30YLC,115 品牌、价格
元器件型号 |
厂商 |
描述 |
数量 |
价格 |
PSMN1R0-30YLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 100A LFPAK |
0 |
1,500:$0.74535
3,000:$0.69566
7,500:$0.66088
10,500:$0.63603
37,500:$0.61616
75,000:$0.59628
|
PH7030L,115 |
NXP Semiconductors |
MOSFET N-CH 30V 68A LFPAK |
0 |
|
PSMN5R0-80BS,118 |
NXP Semiconductors |
MOSFET N CH 80V 100A D2PAK |
0 |
800:$1.19274
1,600:$1.09461
2,400:$1.01912
5,600:$0.98137
20,000:$0.94363
40,000:$0.92853
80,000:$0.90588
|
PSMN1R0-30YLC,115 PDF参数
类别: |
分离式半导体产品
|
FET 型: |
MOSFET N 通道,金属氧化物
|
FET 特点: |
逻辑电平门
|
漏极至源极电压(Vdss): |
30V
|
电流 - 连续漏极(Id) @ 25° C: |
100A
|
开态Rds(最大)@ Id, Vgs @ 25° C: |
1.15 毫欧 @ 25A,10V
|
Id 时的 Vgs(th)(最大): |
1.95V @ 1mA
|
闸电荷(Qg) @ Vgs: |
103.5nC @ 10V
|
输入电容 (Ciss) @ Vds: |
6645pF @ 15V
|
功率 - 最大: |
272W
|
安装类型: |
表面贴装
|
封装/外壳: |
SC-100,SOT-669,4-LFPAK
|
供应商设备封装: |
LFPAK,Power-SO8
|
包装: |
带卷 (TR)
|