分离式半导体产品 2N7002F,215品牌、价格、PDF参数

2N7002F,215 • 品牌、价格
元器件型号 厂商 描述 数量 价格
2N7002F,215 NXP Semiconductors MOSFET N-CH 60V 475MA SOT23 3,000 3,000:$0.02524
2N7002P,215 NXP Semiconductors MOSFET N-CH SGL 60V SOT-23 51,388 1:$0.14000
10:$0.12700
25:$0.11600
100:$0.08340
250:$0.04916
500:$0.04078
1,000:$0.02781
2N7002P,215 NXP Semiconductors MOSFET N-CH SGL 60V SOT-23 51,388 1:$0.14000
10:$0.12700
25:$0.11600
100:$0.08340
250:$0.04916
500:$0.04078
1,000:$0.02781
2N7002P,215 NXP Semiconductors MOSFET N-CH SGL 60V SOT-23 42,000 3,000:$0.02300
6,000:$0.02100
15,000:$0.01800
30,000:$0.01600
75,000:$0.01400
150,000:$0.01200
BSH103,215 NXP Semiconductors MOSFET N-CH 30V 0.85A SOT23 24,679 1:$0.54000
10:$0.37900
25:$0.31120
100:$0.24870
250:$0.18116
500:$0.14714
1,000:$0.11309
PSMN030-60YS,115 NXP Semiconductors MOSFET N-CH LFPAK 1,541 1:$0.66000
10:$0.58200
25:$0.51440
100:$0.44840
250:$0.39036
500:$0.33228
PSMN013-30MLC,115 NXP Semiconductors MOSFET N-CH 30V 39A LFPAK33 1,380 1:$0.61000
10:$0.51500
25:$0.45120
100:$0.38630
250:$0.33500
500:$0.28376
2N7002F,215 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 475mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 0.69nC @ 10V
输入电容 (Ciss) @ Vds: 50pF @ 10V
功率 - 最大: 830mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: 带卷 (TR)