分离式半导体产品 PSMN1R2-25YL,115品牌、价格、PDF参数

PSMN1R2-25YL,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN1R2-25YL,115 NXP Semiconductors MOSFET N-CH 25V 100A LFPAK 4,727 1:$1.72000
10:$1.54900
25:$1.38720
100:$1.24750
250:$1.10768
500:$0.96786
BUK92150-55A,118 NXP Semiconductors MOSFET N-CH 55V 11A DPAK 6,673 1:$0.67000
10:$0.59100
25:$0.52200
100:$0.45480
250:$0.39592
500:$0.33702
1,000:$0.26994
BUK92150-55A,118 NXP Semiconductors MOSFET N-CH 55V 11A DPAK 6,673 1:$0.67000
10:$0.59100
25:$0.52200
100:$0.45480
250:$0.39592
500:$0.33702
1,000:$0.26994
BUK92150-55A,118 NXP Semiconductors MOSFET N-CH 55V 11A DPAK 5,000 2,500:$0.23700
5,000:$0.22100
12,500:$0.21300
25,000:$0.20500
62,500:$0.20100
125,000:$0.19600
PSMN9R1-30YL,115 NXP Semiconductors MOSFET N-CH 30V 57A SOT669 3,000 1:$0.68000
10:$0.57300
25:$0.50160
100:$0.42950
250:$0.37252
500:$0.31554
PH3120L,115 NXP Semiconductors MOSFET N-CH 20V 100A LFPAK 13,500 1,500:$1.06200
PSMN1R2-25YL,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.2 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 105nC @ 10V
输入电容 (Ciss) @ Vds: 6380pF @ 12V
功率 - 最大: 121W
安装类型: 表面贴装
封装/外壳: SOT1023,4-LFPAK
供应商设备封装: LFPAK,Power-SO8
包装: Digi-Reel®