分离式半导体产品 2N7002F,215品牌、价格、PDF参数

2N7002F,215 • 品牌、价格
元器件型号 厂商 描述 数量 价格
2N7002F,215 NXP Semiconductors MOSFET N-CH 60V 475MA SOT23 5,379 1:$0.19000
10:$0.17700
25:$0.12720
100:$0.09890
250:$0.06216
500:$0.05296
1,000:$0.03608
2N7002F,215 NXP Semiconductors MOSFET N-CH 60V 475MA SOT23 5,379 1:$0.19000
10:$0.17700
25:$0.12720
100:$0.09890
250:$0.06216
500:$0.05296
1,000:$0.03608
2N7002F,215 NXP Semiconductors MOSFET N-CH 60V 475MA SOT23 3,000 3,000:$0.03200
6,000:$0.02700
15,000:$0.02400
2N7002,215 NXP Semiconductors MOSFET N-CH 60V 300MA SOT-23 1,047,604 1:$0.15000
10:$0.14200
25:$0.12880
100:$0.09270
250:$0.05460
500:$0.04530
1,000:$0.03090
2N7002,215 NXP Semiconductors MOSFET N-CH 60V 300MA SOT-23 1,047,604 1:$0.15000
10:$0.14200
25:$0.12880
100:$0.09270
250:$0.05460
500:$0.04530
1,000:$0.03090
2N7002,215 NXP Semiconductors MOSFET N-CH 60V 300MA SOT-23 1,044,000 3,000:$0.02600
6,000:$0.02300
15,000:$0.02000
30,000:$0.01800
75,000:$0.01600
150,000:$0.01300
2N7002F,215 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 475mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 0.69nC @ 10V
输入电容 (Ciss) @ Vds: 50pF @ 10V
功率 - 最大: 830mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: Digi-Reel®