分离式半导体产品 BSH202,215品牌、价格、PDF参数

BSH202,215 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSH202,215 NXP Semiconductors MOSFET P-CH 30V 520MA SOT23 10,745 1:$0.50000
10:$0.39400
25:$0.33240
100:$0.27080
250:$0.22424
500:$0.18526
1,000:$0.13875
BSH202,215 NXP Semiconductors MOSFET P-CH 30V 520MA SOT23 9,000 3,000:$0.12400
6,000:$0.11600
15,000:$0.10900
30,000:$0.10000
75,000:$0.09600
150,000:$0.09200
BUK6211-75C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK 2,500 2,500:$0.69100
5,000:$0.65600
12,500:$0.63200
25,000:$0.61200
62,500:$0.59200
BSP100,135 NXP Semiconductors MOSFET N-CH 30V 3.2A SOT223 2,157 1:$0.69000
10:$0.58100
25:$0.50920
100:$0.43570
250:$0.37788
500:$0.32008
1,000:$0.24675
PMF290XN,115 NXP Semiconductors MOSFET N-CH 20V 1A SOT323 20,092 1:$0.48000
10:$0.37400
25:$0.31560
100:$0.25700
250:$0.21288
500:$0.17586
1,000:$0.13172
PMF370XN,115 NXP Semiconductors MOSFET N-CH 30V 870MA SOT-323 9,000 3,000:$0.09398
6,000:$0.08829
PMF370XN,115 NXP Semiconductors MOSFET N-CH 30V 870MA SOT323 42,000 3,000:$0.11700
6,000:$0.11000
15,000:$0.10300
30,000:$0.09500
75,000:$0.09100
150,000:$0.08800
BSH202,215 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 520mA
开态Rds(最大)@ Id, Vgs @ 25° C: 900 毫欧 @ 280mA,10V
Id 时的 Vgs(th)(最大): 1.9V @ 1mA
闸电荷(Qg) @ Vgs: 2.9nC @ 10V
输入电容 (Ciss) @ Vds: 80pF @ 24V
功率 - 最大: 417mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: Digi-Reel®