分离式半导体产品 PSMN4R4-30MLC,115品牌、价格、PDF参数

PSMN4R4-30MLC,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN4R4-30MLC,115 NXP Semiconductors MOSFET N-CH 30V 70A LFPAK33 1,500 1:$0.74000
10:$0.65000
25:$0.57440
100:$0.50040
250:$0.43560
500:$0.37080
PMV48XP,215 NXP Semiconductors MOSFET P-CH 20V 3.5A SOT23 11,690 1:$0.46000
10:$0.36300
25:$0.30640
100:$0.24980
250:$0.20692
500:$0.17092
1,000:$0.12802
PSMN4R4-30MLC,115 NXP Semiconductors MOSFET N-CH 30V 70A LFPAK33 0 1,500:$0.28800
3,000:$0.26100
7,500:$0.24300
10,500:$0.23400
37,500:$0.22500
75,000:$0.22140
150,000:$0.21600
PMV56XN,215 NXP Semiconductors MOSFET N-CH 20V 3.76A SOT23 15,000 3,000:$0.14000
6,000:$0.13100
15,000:$0.12200
30,000:$0.11500
75,000:$0.11300
150,000:$0.10800
PMV45EN,215 NXP Semiconductors MOSFET N-CH 30V 5.4A SOT-23 9,000 3,000:$0.17800
6,000:$0.16700
15,000:$0.15500
30,000:$0.14700
75,000:$0.14400
150,000:$0.13800
PSMN1R7-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 5,058 1:$1.23000
10:$1.08500
25:$0.97920
100:$0.85680
250:$0.75140
500:$0.66640
PSMN4R4-30MLC,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 70A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.65 欧姆 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 23nC @ 10V
输入电容 (Ciss) @ Vds: 1515pF @ 15V
功率 - 最大: 69W
安装类型: 表面贴装
封装/外壳: SOT1210,8-LFPAK33(5 引线)
供应商设备封装: LFPAK33
包装: 剪切带 (CT)