PSMN6R0-30YLB,115 品牌、价格
元器件型号 |
厂商 |
描述 |
数量 |
价格 |
PSMN6R0-30YLB,115 |
NXP Semiconductors |
MOSFET N-CH 30V LFPAK |
0 |
1,500:$0.24786
3,000:$0.22599
7,500:$0.21141
10,500:$0.19683
37,500:$0.18662
75,000:$0.18225
150,000:$0.17496
|
PMN20EN,115 |
NXP Semiconductors |
MOSFET N-CH 30V SC-74 |
10,830 |
1:$0.46000
10:$0.39100
25:$0.34280
100:$0.29360
250:$0.25460
500:$0.21566
1,000:$0.16625
|
PMN20EN,115 |
NXP Semiconductors |
MOSFET N-CH 30V SC-74 |
10,830 |
1:$0.46000
10:$0.39100
25:$0.34280
100:$0.29360
250:$0.25460
500:$0.21566
1,000:$0.16625
|
PMN20EN,115 |
NXP Semiconductors |
MOSFET N-CH 30V SC-74 |
9,000 |
3,000:$0.14700
6,000:$0.13800
15,000:$0.12800
30,000:$0.12200
75,000:$0.11900
150,000:$0.11400
|
PSMN6R0-30YLB,115 PDF参数
类别: |
分离式半导体产品
|
FET 型: |
MOSFET N 通道,金属氧化物
|
FET 特点: |
逻辑电平门
|
漏极至源极电压(Vdss): |
30V
|
电流 - 连续漏极(Id) @ 25° C: |
71A
|
开态Rds(最大)@ Id, Vgs @ 25° C: |
6.5 毫欧 @ 20A,10V
|
Id 时的 Vgs(th)(最大): |
1.95V @ 1mA
|
闸电荷(Qg) @ Vgs: |
19nC @ 10V
|
输入电容 (Ciss) @ Vds: |
1088pF @ 15V
|
功率 - 最大: |
58W
|
安装类型: |
表面贴装
|
封装/外壳: |
SC-100,SOT-669,4-LFPAK
|
供应商设备封装: |
LFPAK,Power-SO8
|
包装: |
带卷 (TR)
|