分离式半导体产品 BSP250,135品牌、价格、PDF参数

BSP250,135 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSP250,135 NXP Semiconductors MOSFET P-CH 30V 3A SOT223 3,938 1:$0.91000
10:$0.79400
25:$0.70160
100:$0.61130
250:$0.53216
500:$0.45300
1,000:$0.36284
PSMN5R9-30YL,115 NXP Semiconductors MOSFET N-CH 30V 78A SOT669 1,500 1,500:$0.25808
3,000:$0.23389
7,500:$0.21775
10,500:$0.20969
37,500:$0.20163
75,000:$0.19840
150,000:$0.19356
PSMN045-80YS,115 NXP Semiconductors MOSFET N-CH LFPAK 1,500 1,500:$0.25808
3,000:$0.23389
7,500:$0.21775
10,500:$0.20969
37,500:$0.20163
75,000:$0.19840
150,000:$0.19356
PSMN3R7-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 999 1:$0.81000
10:$0.71200
25:$0.62920
100:$0.54820
250:$0.47724
500:$0.40624
PSMN3R7-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 999 1:$0.81000
10:$0.71200
25:$0.62920
100:$0.54820
250:$0.47724
500:$0.40624
PSMN3R7-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 0 1,500:$0.31552
3,000:$0.28594
7,500:$0.26622
10,500:$0.25636
37,500:$0.24650
75,000:$0.24256
150,000:$0.23664
BSP250,135 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 250 毫欧 @ 1A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 1mA
闸电荷(Qg) @ Vgs: 25nC @ 10V
输入电容 (Ciss) @ Vds: 250pF @ 20V
功率 - 最大: 1.65W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SC-73
包装: Digi-Reel®