RJK0355DPA-01#J0B • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| RJK0355DPA-01#J0B |
Renesas Electronics America |
MOSFET N-CH 30V 30A 2WPACK |
2,500 |
2,500:$0.35000
5,000:$0.33250
12,500:$0.31875
25,000:$0.31000
62,500:$0.30000
|
| RJK03B7DPA-00#J5A |
Renesas Electronics America |
MOSFET N-CH 30V 30A W-PAK |
8,700 |
1:$0.95000
10:$0.85000
25:$0.75000
100:$0.67500
250:$0.58752
500:$0.52500
1,000:$0.41250
|
| RJK1053DPB-00#J5 |
Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
4,794 |
1:$2.28000
10:$1.95000
25:$1.75520
100:$1.59250
250:$1.43000
500:$1.23500
1,000:$1.04000
|
| NP75P03YDG-E1-AY |
Renesas Electronics America |
MOSFET P-CH -30V 75A 8HSON |
4,899 |
1:$2.28000
10:$1.95000
25:$1.75520
100:$1.59250
250:$1.43000
500:$1.23500
1,000:$1.04000
|
RJK0355DPA-01#J0B • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
30V
|
| 电流 - 连续漏极(Id) @ 25° C: |
30A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
10.7 毫欧 @ 15A，10V
|
| Id 时的 Vgs(th)（最大）: |
-
|
| 闸电荷(Qg) @ Vgs: |
6.3nC @ 4.5V
|
| 输入电容 (Ciss) @ Vds: |
860pF @ 10V
|
| 功率 - 最大: |
25W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
8-WDFN 裸露焊盘
|
| 供应商设备封装: |
8-WPAK
|
| 包装: |
带卷 (TR)
|