分离式半导体产品 PSMN3R0-30MLC,115品牌、价格、PDF参数

PSMN3R0-30MLC,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN3R0-30MLC,115 NXP Semiconductors MOSFET N-CH 30V 70A LFPAK33 0 1,500:$0.36640
3,000:$0.33205
7,500:$0.30915
10,500:$0.29770
37,500:$0.28625
75,000:$0.28167
150,000:$0.27480
PSMN050-80PS,127 NXP Semiconductors MOSFET N-CH 80V 22A TO-220AB3 5,000 1,000:$0.36288
2,000:$0.33869
5,000:$0.32175
PSMN050-80PS,127 NXP Semiconductors MOSFET N-CH 80V 22A TO-220AB3 4,629 1:$0.94000
10:$0.83300
25:$0.75280
100:$0.65860
250:$0.57792
500:$0.51072
1,000:$0.40320
2,500:$0.37632
5,000:$0.35750
BUK6217-55C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK SOT428 12,887 1:$0.99000
10:$0.87200
25:$0.78760
100:$0.68920
250:$0.60444
500:$0.53606
1,000:$0.42393
BUK765R2-40B,118 NXP Semiconductors MOSFET N-CH 40V 75A D2PAK 4,775 1:$1.89000
10:$1.70800
25:$1.52960
100:$1.37550
250:$1.22136
PSMN3R0-30MLC,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 70A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.05 毫欧 @ 25A,4.5V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 34.8nC @ 10V
输入电容 (Ciss) @ Vds: 2330pF @ 15V
功率 - 最大: 88W
安装类型: 表面贴装
封装/外壳: SOT1210,8-LFPAK33(5 引线)
供应商设备封装: LFPAK33
包装: 带卷 (TR)