NP90N055VDG-E1-AY • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| NP90N055VDG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 55V 90A TO-252 |
4,975 |
1:$2.45000
10:$2.10000
25:$1.89000
100:$1.71500
250:$1.54000
500:$1.33000
1,000:$1.12000
|
| NP90N055VDG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 55V 90A TO-252 |
4,975 |
1:$2.45000
10:$2.10000
25:$1.89000
100:$1.71500
250:$1.54000
500:$1.33000
1,000:$1.12000
|
| NP90N055VDG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 55V 90A TO-252 |
2,500 |
2,500:$0.94500
5,000:$0.91000
12,500:$0.87500
25,000:$0.85750
62,500:$0.84000
|
| NP90N03VUG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252 |
2,480 |
1:$2.45000
10:$2.10000
25:$1.89000
100:$1.71500
250:$1.54000
500:$1.33000
1,000:$1.12000
|
| NP90N03VUG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252 |
2,480 |
1:$2.45000
10:$2.10000
25:$1.89000
100:$1.71500
250:$1.54000
500:$1.33000
1,000:$1.12000
|
| NP90N03VUG-E1-AY |
Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252 |
0 |
2,500:$0.94500
5,000:$0.91000
12,500:$0.87500
25,000:$0.85750
62,500:$0.84000
|
NP90N055VDG-E1-AY • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
55V
|
| 电流 - 连续漏极(Id) @ 25° C: |
90A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
6 毫欧 @ 45A，10V
|
| Id 时的 Vgs(th)（最大）: |
2.5V @ 250µA
|
| 闸电荷(Qg) @ Vgs: |
135nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
6900pF @ 25V
|
| 功率 - 最大: |
1.2W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
TO-252-3，DPak（2 引线+接片），SC-63
|
| 供应商设备封装: |
TO-252
|
| 包装: |
Digi-Reel®
|