PSMN2R2-25YLC,115 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN2R2-25YLC,115 |
NXP Semiconductors |
MOSFET N-CH 25V 100A LFPAK |
0 |
1,500:$0.38064
3,000:$0.34496
7,500:$0.32117
10,500:$0.30927
37,500:$0.29737
75,000:$0.29262
150,000:$0.28548
|
| BSP126,115 |
NXP Semiconductors |
MOSFET N-CH 250V 375MA SOT223 |
2,000 |
1,000:$0.39200
2,000:$0.36600
5,000:$0.34800
10,000:$0.33500
25,000:$0.32400
50,000:$0.31400
|
| PSMN2R9-30MLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 70A LFPAK33 |
1,490 |
1:$0.98000
10:$0.85900
25:$0.75920
100:$0.66160
250:$0.57596
500:$0.49028
|
| BSP126,135 |
NXP Semiconductors |
MOSFET N-CH 250V 375MA SOT223 |
0 |
4,000:$0.36600
8,000:$0.34800
12,000:$0.33500
28,000:$0.32400
100,000:$0.31400
|
| PSMN2R9-30MLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 70A LFPAK33 |
1,490 |
1:$0.98000
10:$0.85900
25:$0.75920
100:$0.66160
250:$0.57596
500:$0.49028
|
PSMN2R2-25YLC,115 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
25V
|
| 电流 - 连续漏极(Id) @ 25° C: |
100A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
2.4 毫欧 @ 25A，10V
|
| Id 时的 Vgs(th)（最大）: |
1.95V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
39nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
2542pF @ 12V
|
| 功率 - 最大: |
106W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
SC-100，SOT-669，4-LFPAK
|
| 供应商设备封装: |
LFPAK，Power-SO8
|
| 包装: |
带卷 (TR)
|