PSMN016-100YS,115 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN016-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
0 |
1,500:$0.52425
3,000:$0.48930
7,500:$0.46483
10,500:$0.44736
37,500:$0.43338
75,000:$0.41940
|
| BUK98150-55A,135 |
NXP Semiconductors |
MOSFET N-CH 55V 5.5A SOT-223 |
4,535 |
1:$0.51000
10:$0.43000
25:$0.37680
100:$0.32260
250:$0.27980
500:$0.23698
1,000:$0.18270
|
| PSMN3R3-40YS,115 |
NXP Semiconductors |
MOSFET N-CH 40V LFPAK |
1,475 |
1:$1.26000
10:$1.11500
25:$1.00640
100:$0.88070
250:$0.77240
500:$0.68502
|
| BUK663R2-40C,118 |
NXP Semiconductors |
MOSFET N-CH TRENCH D2PACK |
4,790 |
1:$2.04000
10:$1.84500
25:$1.65320
100:$1.48640
250:$1.31984
|
PSMN016-100YS,115 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
100V
|
| 电流 - 连续漏极(Id) @ 25° C: |
51A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
16.3 毫欧 @ 15A，10V
|
| Id 时的 Vgs(th)（最大）: |
4V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
54nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
2744pF @ 50V
|
| 功率 - 最大: |
117W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
SC-100，SOT-669，4-LFPAK
|
| 供应商设备封装: |
LFPAK，Power-SO8
|
| 包装: |
带卷 (TR)
|