分离式半导体产品 BUK662R4-40C,118品牌、价格、PDF参数

BUK662R4-40C,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BUK662R4-40C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 3,200 800:$1.37570
1,600:$1.26251
2,400:$1.17545
5,600:$1.13191
20,000:$1.08838
40,000:$1.07096
80,000:$1.04484
BUK661R8-30C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,798 1:$2.78000
10:$2.50800
25:$2.24640
100:$2.02000
250:$1.79364
BUK663R5-55C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,777 1:$2.78000
10:$2.50800
25:$2.24640
100:$2.02000
250:$1.79364
BUK663R5-55C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,777 1:$2.78000
10:$2.50800
25:$2.24640
100:$2.02000
250:$1.79364
BUK663R5-55C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,000 800:$1.37570
1,600:$1.26251
2,400:$1.17545
5,600:$1.13191
20,000:$1.08838
40,000:$1.07096
80,000:$1.04484
BUK964R4-40B,118 NXP Semiconductors MOSFET N-CH 40V 75A D2PAK 5,347 1:$2.77000
10:$2.50500
25:$2.24400
100:$2.01790
250:$1.79180
BUK662R4-40C,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 120A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.3 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 1mA
闸电荷(Qg) @ Vgs: 199nC @ 10V
输入电容 (Ciss) @ Vds: 11334pF @ 25V
功率 - 最大: 263W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)