分离式半导体产品 BUK6207-55C,118品牌、价格、PDF参数

BUK6207-55C,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BUK6207-55C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK 0 2,500:$0.64400
5,000:$0.61200
12,500:$0.58900
25,000:$0.57100
62,500:$0.55200
BUK624R5-30C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK SOT428 9,900 1:$1.66000
10:$1.46800
25:$1.32520
100:$1.15970
250:$1.01704
500:$0.90200
1,000:$0.71331
BUK624R5-30C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK SOT428 9,900 1:$1.66000
10:$1.46800
25:$1.32520
100:$1.15970
250:$1.01704
500:$0.90200
1,000:$0.71331
BUK624R5-30C,118 NXP Semiconductors MOSFET N-CH TRENCH DPAK 0 2,500:$0.64400
5,000:$0.61200
12,500:$0.58900
25,000:$0.57100
62,500:$0.55200
PSMN004-60B,118 NXP Semiconductors MOSFET N-CH 60V 75A D2PAK 3,964 1:$3.17000
10:$2.83800
25:$2.55200
100:$2.32100
250:$2.10100
PSMN004-60B,118 NXP Semiconductors MOSFET N-CH 60V 75A D2PAK 3,200 800:$1.65000
1,600:$1.54000
2,400:$1.46300
5,600:$1.40800
20,000:$1.36400
40,000:$1.32000
BUK6207-55C,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 7.8 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 1mA
闸电荷(Qg) @ Vgs: 82nC @ 10V
输入电容 (Ciss) @ Vds: 5160pF @ 25V
功率 - 最大: 158W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)