BUK965R8-100E,118 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| BUK965R8-100E,118 |
NXP Semiconductors |
MOSFET N-CH 100V 120A D2PAK |
0 |
1:$3.38000
10:$3.02800
25:$2.72280
100:$2.47630
250:$2.24156
|
| BUK965R8-100E,118 |
NXP Semiconductors |
MOSFET N-CH 100V 120A D2PAK |
0 |
1:$3.38000
10:$3.02800
25:$2.72280
100:$2.47630
250:$2.24156
|
| PSMN070-200P,127 |
NXP Semiconductors |
MOSFET N-CH 200V 35A SOT78 |
2,000 |
1,000:$1.08560
|
| BUK654R6-55C,127 |
NXP Semiconductors |
MOSFET N-CH TRENCH SOT78A |
4,808 |
1:$1.90000
10:$1.72000
25:$1.53560
100:$1.38220
250:$1.22860
500:$1.07502
1,000:$0.89074
2,500:$0.82930
5,000:$0.79859
|
| PSMN5R6-100PS,127 |
NXP Semiconductors |
MOSFET N-CH 100V 100A TO220AB |
8,980 |
1:$2.83000
10:$2.55900
25:$2.28520
100:$2.05670
250:$1.82820
500:$1.59968
1,000:$1.32545
2,500:$1.23404
5,000:$1.18833
|
BUK965R8-100E,118 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
100V
|
| 电流 - 连续漏极(Id) @ 25° C: |
120A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
5.8 毫欧 @ 25A，5V
|
| Id 时的 Vgs(th)（最大）: |
2.1V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
133nC @ 5V
|
| 输入电容 (Ciss) @ Vds: |
17460pF @ 25V
|
| 功率 - 最大: |
357W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
TO-263-3，D²Pak（2 引线+接片），TO-263AB
|
| 供应商设备封装: |
D2PAK
|
| 包装: |
Digi-Reel®
|