分离式半导体产品 IXFH52N50P2品牌、价格、PDF参数

IXFH52N50P2 • 品牌、价格
元器件型号 厂商 描述 数量 价格
IXFH52N50P2 IXYS MOSFET N-CH 500V 52A TO247 341 1:$8.20000
10:$7.38000
100:$6.06800
250:$5.57600
500:$5.08400
1,000:$4.42800
2,500:$4.26400
5,000:$4.10000
10,000:$4.01800
IXTV110N25TS IXYS MOSFET N-CH 250V 110A PLUS220SMD 1,754 1:$7.70000
10:$6.93000
25:$6.31400
100:$5.69800
250:$5.23600
500:$4.77400
1,000:$4.15800
2,500:$4.00400
5,000:$3.85000
IXFV12N90PS IXYS MOSFET N-CH 900V 12A PLUS220SMD 200 1:$7.33000
10:$6.59300
25:$6.00640
100:$5.42050
250:$4.98100
500:$4.54150
1,000:$3.95550
2,500:$3.80900
5,000:$3.66250
IXFX32N100Q3 IXYS MOSFET N-CH 1000V 32A PLUS247 170 1:$22.33000
10:$20.65800
100:$17.64340
250:$16.19172
500:$15.41004
1,000:$14.51671
2,500:$14.07004
5,000:$13.73504
IXFH52N50P2 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 52A
开态Rds(最大)@ Id, Vgs @ 25° C: 120 毫欧 @ 26A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 4mA
闸电荷(Qg) @ Vgs: 113nC @ 10V
输入电容 (Ciss) @ Vds: 6800pF @ 25V
功率 - 最大: 960W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件