分离式半导体产品 SQD15N06-42L-GE3品牌、价格、PDF参数

SQD15N06-42L-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SQD15N06-42L-GE3 Vishay Siliconix MOSFET N-CH 60V 15A TO252 0 2,000:$0.78975
SI5441DC-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1206-8 0 3,000:$0.76950
SQD50N03-06P-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 50A TO252 0 2,000:$0.76005
SI4626ADY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8-SOIC 0 2,500:$0.76005
SI7392DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PPAK 8SOIC 0 3,000:$0.75600
SI1488DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6.1A SC70-6 0 3,000:$0.20925
SI1405BDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 0 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI1405BDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 0 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SIRA02DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A SO-8 0 1:$2.00000
25:$1.53920
100:$1.39650
250:$1.25400
500:$1.08300
1,000:$0.91200
SI1405BDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 0 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
2N7002-E3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23 0 1,000:$0.20400
SQD15N06-42L-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 42 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 10V
输入电容 (Ciss) @ Vds: 535pF @ 25V
功率 - 最大: 33W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: 带卷 (TR)