分离式半导体产品 BSC084P03NS3 G品牌、价格、PDF参数

BSC084P03NS3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSC084P03NS3 G Infineon Technologies MOSFET P-CH 30V 14.9A TDSON-8 0 1:$1.88000
10:$1.68200
25:$1.48400
100:$1.33540
250:$1.16232
500:$1.03866
1,000:$0.81609
2,500:$0.76663
BSC084P03NS3 G Infineon Technologies MOSFET P-CH 30V 14.9A TDSON-8 0 1:$1.88000
10:$1.68200
25:$1.48400
100:$1.33540
250:$1.16232
500:$1.03866
1,000:$0.81609
2,500:$0.76663
BSR302N L6327 Infineon Technologies MOSFET N-CH 30V 3.7A SC-59 0 1:$0.64000
10:$0.50900
25:$0.44520
100:$0.38150
250:$0.32948
500:$0.28322
1,000:$0.21964
BSR302N L6327 Infineon Technologies MOSFET N-CH 30V 3.7A SC-59 0 1:$0.64000
10:$0.50900
25:$0.44520
100:$0.38150
250:$0.32948
500:$0.28322
1,000:$0.21964
SPI15N65C3 Infineon Technologies MOSFET N-CH 650V 15A TO262-3 0 500:$2.06902
BSC084P03NS3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 14.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.4 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 1.9V @ 105µA
闸电荷(Qg) @ Vgs: 58nC @ 10V
输入电容 (Ciss) @ Vds: 4785pF @ 15V
功率 - 最大: 69W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PG-TDSON-8
包装: Digi-Reel®