分离式半导体产品 S1DHE3/5AT品牌、价格、PDF参数

S1DHE3/5AT • 品牌、价格
元器件型号 厂商 描述 数量 价格
S1DHE3/5AT Vishay General Semiconductor DIODE GPP 1A 200V SMA DO-214AC 0 15,000:$0.06000
S1BHE3/5AT Vishay General Semiconductor DIODE GPP 1A 100V SMA DO-214AC 0 15,000:$0.06000
S1AHE3/5AT Vishay General Semiconductor DIODE GPP 1A 50V SMA DO-214AC 0 15,000:$0.06000
1N5818-E3/73 Vishay General Semiconductor DIODE SCHOTTKY 1A 30V DO-204AL 0 9,000:$0.07500
MSE1PJHM3/89A Vishay General Semiconductor DIODE ESD PROT 1A 600V MICROSMP 0 9,000:$0.05900
MSE1PGHM3/89A Vishay General Semiconductor DIODE ESD PROT 1A 400V MICROSMP 0 9,000:$0.05900
MSE1PBHM3/89A Vishay General Semiconductor DIODE ESD PROT 1A 100V MICROSMP 0 9,000:$0.05900
RGP5020-E3/54 Vishay General Semiconductor DIODE FAST 0.5A 200V AXIAL 0 11,000:$0.07300
RS1J-E3/5AT Vishay General Semiconductor DIODE FAST 1A 600V 250NS SMA 0 7,500:$0.05600
RS1G-E3/5AT Vishay General Semiconductor DIODE FAST 1A 400V 150NS SMA 0 7,500:$0.05600
S1DHE3/5AT • PDF参数
类别: 分离式半导体产品
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 1A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.8µs
电流 - 在 Vr 时反向漏电: 1µA @ 200V
电容@ Vr, F: -
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)