分离式半导体产品 S3KHE3/57T品牌、价格、PDF参数

S3KHE3/57T • 品牌、价格
元器件型号 厂商 描述 数量 价格
S3KHE3/57T Vishay General Semiconductor DIODE GPP 3A 800V SMC DO-214AB 0 1,700:$0.18020
EGL41B/1 Vishay General Semiconductor DIODE FAST 1A 100V DO-213AB 0 4,000:$0.11700
SB230-E3/54 Vishay General Semiconductor DIODE SCHOTTKY 30V 2A AXIAL 0 4,000:$0.11600
GP10MEHE3/54 Vishay General Semiconductor DIODE 1A 1000V SMC 0 11,000:$0.11600
GP10ME-E3/54 Vishay General Semiconductor DIODE 1A 1000V STD SMC 0 11,000:$0.11600
GL41YHE3/97 Vishay General Semiconductor DIODE 1A 1600V STD MELF 0 10,000:$0.11600
GL41KHE3/97 Vishay General Semiconductor DIODE 1A 800V STD MELF 0 10,000:$0.11600
GL41BHE3/97 Vishay General Semiconductor DIODE 1A 100V STD MELF 0 10,000:$0.11600
BYM07-400HE3/98 Vishay General Semiconductor DIODE 0.5A 400V 50NS DO-213AA 0 5,000:$0.12800
ES2B-E3/5BT Vishay General Semiconductor DIODE 2A 100V 20NS DO-214AA SMB 0 6,400:$0.11600
BYM07-200HE3/98 Vishay General Semiconductor DIODE 0.5A 200V 50NS DO-213AA 0 5,000:$0.12800
S3KHE3/57T • PDF参数
类别: 分离式半导体产品
二极管类型: 标准
电压 - (Vr)(最大): 800V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 1.15V @ 2.5A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2.5µs
电流 - 在 Vr 时反向漏电: 10µA @ 800V
电容@ Vr, F: -
安装类型: 表面贴装
封装/外壳: DO-214AB,SMC
供应商设备封装: DO-214AB,(SMC)
包装: 带卷 (TR)