ihw30n90r igbt 电源模块

reverse conducting igbt with monolithic body diode
features:
• 1.5v typical saturation voltage of igbt
• trench and fieldstop technology for 900 v applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in vce(sat)
• low emi
• qualified according to jedec1 for target applications
• application specific optimisation of inverse diode
• pb-free lead plating; rohs compliant
applications:
• microwave oven
• soft switching applications for zcs